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Buried graphene heterostructures for electrostatic doping of low-dimensional materials.
Alexander Gumprich, Julian Liedtke, Sarah Beck, Irina Chirca, Teja Potočnik, Jack Alexander-Webber, Stephan Hofmann, Stefan Tappertzhofen
Apr 13, 2023
The fabrication and characterization of steep slope transistor devices based on low-dimensional materials requires precise electrostatic doping profiles with steep spatial gradients in order to maintain maximum control over the...